PART |
Description |
Maker |
HY5DU283222F HY5DU283222F-26 HY5DU283222F-33 HY5DU |
GDDR SDRAM - 128Mb 128M(4MX32) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
K4D551638F-TC33 K4D551638F-TC50 K4D551638F-TC36 K4 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
|
Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd.
|
K4D553238F-GC33 K4D553238F-GC36 K4D553238F-GC2A K4 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4D551638D K4D551638D-TC K4D551638D-TC2A K4D551638 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存 CABLE ASSEMBLY; 2.9mm MALE TO 2.9mm MALE; 40 GHz CABLE 56Mbit GDDR SDRAM内存
|
Samsung Electronic SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存 ; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存 8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144 8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. DiCon Fiberoptics, Inc. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HY5DU121622CTP |
512 Mb GDDR SDRAM
|
Hynix Semiconductor
|
HY5DU561622CTP |
256M gDDR SDRAM
|
Hynix
|
W9412G2CB |
1M 】 4 BANKS 】 32 BITS GDDR SDRAM
|
Winbond
|
HY5DU283222AQ HY5DU283222AQ-33 HY5DU283222AQ-36 HY |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
HY5DV281622DT-5 HY5DV281622DT-36 HY5DV281622DT-33 |
128M(8Mx16) GDDR SDRAM 8M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Hynix Semiconductor, Inc.
|